2N5794 TRANSISTOR Datasheet

2N5794 Datasheet, PDF, Equivalent


Part Number

2N5794

Description

DUAL TRANSISTOR

Manufacture

Motorola

Total Page 1 Pages
Datasheet
Download 2N5794 Datasheet


2N5794
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation T"a = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
vEBO
ic
PD
Pd
TJ. Tstg
Value
40
75
6.0
600
One
Die
Both Die
Equal
Power
500 600
2.9 3.4
1.2 2.0
6.9 11.43
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
mCollector-Emitter Breakdown VoltageQ) (Ic = 10 Adc, \q = 0)
Collector-Base Breakdown Voltage c(l = 10 fiAdc, lg = 0)
Emitter-Base Breakdown Voltage (lg = 10 /iAdc, Ic = 0)
Collector Cutoff Current (Vcb = 50 Vdc, lg = 0)
Emitter Cutoff Current (Veb = 4.0 Vdc, Ic = 0)
Collector 1 to Collector 2 Leakage Curre nt (ViC-2C
ON CHARACTERISTICS
± 50 Vdc)
DC Current Gain
dC = 100 jiAdc, Vce = 10 Vdc)
(IC = 10 mAdc, Vce = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)(1)
dC = 150 mAdc, Vce = 10 Vdc)(1)
dC = 150 mAdc, Vce = 10 Vdc)(1)
flC = 300 mAdc, Vce = 10 Vdc)(1)
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Collector-Emitter Saturation VoltageO) 0c = 150 mAdc, Ib = 15 mAdc)
dC = 300 mAdc, Ib = 30 mAdc)
Base-Emitter Saturation Voltaged) dc = 150 mAdc, Bl = 15 mAdc)
dC = 300 mAdc, Bl = 30 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product(2) c(l = 20 mAdc, Vce = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance (Vcb = 10 Vdc, = 0, f = 100 kHz)
Emitter-Base Capacitance (Veb = 0-5 Vdc, lc = 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(Vce = 30 Vdc, VB E(off) = 0.5 Vdc,
IC = 150 mAdc, BI 1 = 15 mAdc)
Storage Time
Fall Time
(Vce = 30 Vdc, lc = 150 mAdc,
IBI = 'B2 = 15 mAdc)
(1) Pulse Test: Pulse Width *s 300 fis, Duty Cycle 2.0%.
(2) fj is defined as the frequency at which |hfe | extrapolates to unity.
2N5793
2N5794
JAN, JTX, JTXV AVAILABLE
CASE 654-07, STYLE 1
DUAL TRANSISTOR
NPN SILICON
Refer to MD2218.A for graphs.
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
>CBO
'EBO
'C1-C2
hFE
v CE(sat)
v BE(sat)
Min
40
20
35
25
50
35
75
20
50
40
100
25
40
250
ccb
Ceb
Max
10
10
:1.0
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
120
300
0.3
0.9
1.2
1.8
8.0
15
30
250
Vdc
Vdc
MHz
pF
PF
5-33


Features MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter -Base Voltage —Collector Current Cont inuous @Total Device Dissipation T"a = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25 C Operating and Storage Junction Tempe rature Range Symbol vCEO vCBO vEBO ic PD Pd TJ. Tstg Value 40 75 6.0 600 One Die Both Die Equal Power 500 60 0 2.9 3.4 1.2 2.0 6.9 11.43 -65 to +20 0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt s mW/°C °C ELECTRICAL CHARACTERISTIC S (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic m Collector-Emitter Breakdown VoltageQ) ( Ic = 10 Adc, q = 0) Collector-Base Brea kdown Voltage c(l = 10 fiAdc, lg = 0) E mitter-Base Breakdown Voltage (lg = 10 /iAdc, Ic = 0) Collector Cutoff Current (Vcb = 50 Vdc, lg = 0) Emitter Cutoff Current (Veb = 4.0 Vdc, Ic = 0) Collec tor 1 to Collector 2 Leakage Curre nt ( ViC-2C ON CHARACTERISTICS ± 50 Vdc) DC Current Gain dC = 100 jiAdc, Vce = 10 Vdc) (IC = 10 mAdc, V.
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