2N5795 2N5796
JAN, JTX, JTXV AVAILABLE CASE 654-07, STYLE 1 DUAL TRANSISTOR
PNP SILICON
Refer to MD2904,A for graphs.
M...
2N5795 2N5796
JAN, JTX, JTXV AVAILABLE CASE 654-07, STYLE 1 DUAL
TRANSISTOR
PNP SILICON
Refer to MD2904,A for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T"a = 25°C
Derate above 25°C
@Total Power Dissipation Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VCEO VCBO VEBO
"C
PD Pd Tj, Tstg
Value
60
60
5.0
600
One
Die
500 2.9
Both Die Equal Power
600 3.4
1.2 2.0 6.9 11.43
-65 to +200
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C Watts mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(l) 0c = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage (Ip = 10 /*Adc, Ie Emitter-Base Breakdown Voltage Qg = 10 /iAdc, \q = 0) Collector Cutoff Current (Vcb = 50 Vdc, lg -. 0) Emitter Cutoff Current (Vbe = 3.0 Vdc, lp = 0) Collector 1 to Collector 2 Leakage Cu...
