2N5796 TRANSISTOR Datasheet

2N5796 Datasheet, PDF, Equivalent


Part Number

2N5796

Description

DUAL TRANSISTOR

Manufacture

Motorola

Total Page 1 Pages
Datasheet
Download 2N5796 Datasheet


2N5796
2N5795
2N5796
JAN, JTX, JTXV AVAILABLE
CASE 654-07, STYLE 1
DUAL TRANSISTOR
PNP SILICON
Refer to MD2904,A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation T"a = 25°C
Derate above 25°C
@Total Power Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
"C
PD
Pd
Tj, Tstg
Value
60
60
5.0
600
One
Die
500
2.9
Both Die
Equal
Power
600
3.4
1.2 2.0
6.9 11.43
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) 0c = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (Ip = 10 /*Adc, Ie
Emitter-Base Breakdown Voltage Qg = 10 /iAdc, \q = 0)
Collector Cutoff Current (Vcb = 50 Vdc, lg -. 0)
Emitter Cutoff Current (Vbe = 3.0 Vdc, lp = 0)
Collector 1 to Collector 2 Leakage Current (V1C-2C = ±50 vdc
ON CHARACTERISTICS
DC Current Gain
dC = 100 fiAdc, Vce = vdc >
c(l = 1.0 mAdc, Vce = 10 vdc >
c(l = 10 mAdc. Vce = 10Vdc)(1)
dC = 150 mAdc, Vce = 10Vdc)(D
c(l = 150 mAdc, Vce = 10Vdc)(1)
dC = 500 mAdc, Vce = 10 VdcHD
2N5795
2N5796
2N5795
2N5796
2N5795
2N5796
2N5795
2N5796
2N5795
2N5796
2N5795
2N5796
Collector-Emitter Saturation Voltaged) 0c = 150 mAdc, Ib = 15 mAdc)
dC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter Saturation Voltaged) (lc = 150 mAdc, Ib = 15 mAdc)
(IC = 500 mAdc, Ib = 50 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product(2) C(l = 50 mAdc, Vce = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb
=
vdc
-
*E
=
°- f
=
10° kHz)
Emitter-Base Capacitance (Veb = 2.0 Vdc, lc = 0. f = 10° kHz >
SWITCHING CHARACTERISTICS (See Figure 1)
Delay Time
Rise Time
(Vce
=
30
Vdc
<
v BE(off)
=
°- 5 Vdc'
lC = 150 mAdc, BI 1 = 15 mAdc)
Storage Time
Fall Time
(Vce
=
30
vdc
-
'C
=
150 mAdc,
'B1 = 'B2 = 15 mAdc)
(1) Pulse Test: Pulse Width =s 300 fis, Duty Cycle 2.0%.
(2) fj is defined as the frequency at which |hfe | extrapolates to unity.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
'EBO
'C1-C2'
hFE
VCE(sat)
VBE(sat)
Ccb
Ceb
Min
40
75
,40
100
40
100
20
50
40
100
40
50
Max
20
100
:1.0
120
300
0.4
1.6
1.3
2.6
8.0
,30
35
100
40
5-34


Features 2N5795 2N5796 JAN, JTX, JTXV AVAILABLE C ASE 654-07, STYLE 1 DUAL TRANSISTOR PNP SILICON Refer to MD2904,A for graphs. MAXIMUM RATINGS Rating Collector-Emitt er Voltage Collector-Base Voltage Emitt er-Base Voltage —Collector Current Co ntinuous @Total Device Dissipation T"a = 25°C Derate above 25°C @Total Power Dissipation Tc = 25°C Derate above 25 °C Operating and Storage Junction Temp erature Range Symbol VCEO VCBO VEBO "C PD Pd Tj, Tstg Value 60 60 5.0 60 0 One Die 500 2.9 Both Die Equal Powe r 600 3.4 1.2 2.0 6.9 11.43 -65 to +20 0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt s mW/°C °C ELECTRICAL CHARACTERISTIC S (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Col lector-Emitter Breakdown Voltage(l) 0c = 10 mAdc, Ib = 0) Collector-Base Break down Voltage (Ip = 10 /*Adc, Ie Emitter -Base Breakdown Voltage Qg = 10 /iAdc, q = 0) Collector Cutoff Current (Vcb = 50 Vdc, lg -. 0) Emitter Cutoff Current (Vbe = 3.0 Vdc, lp = 0) Collector 1 to Collector 2 Leakage Cu.
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