RECOVERY RECTIFIER. MUR160 Datasheet

MUR160 RECTIFIER. Datasheet pdf. Equivalent

Part MUR160
Description SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER
Feature DATA SHEET MUR105 SERIES SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER VOLTAGE 50~1000 Volts CURRENT 1.
Manufacture PowerSilicon
Datasheet
Download MUR160 Datasheet



MUR160
DATA SHEET
MUR105 SERIES
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER
VOLTAGE 50~1000 Volts CURRENT 1.0 Ampere
FEATURES
z LOW POWER LOSS, HIGH EFFICIENCY
z LOW LEAKAGE
z LOW FORWARD VOLTAGE DROP
z HGH CURRENT CAPABILITY
z HIGH SPEED SWITCHING
z HIGH RELIABILITY
z HIGH CURRENT SURGE
z GLASS PASSIVATED CHIP JUNCTION
. 034 (0. 9 )
. 028 (0 .7 )
MECHANICAL DATA
z CASEMOLDED PLASTIC
z EPOXYUL 94V-0 RATE FLAME RETARDANT
z LEADMIL-STD-202E METHOD 208C GUARANTEED
z MOUNTING POSITIONANY
z WEIGHT0.34 GRAMS
.107 (2. 7 )
.080(2. 0)
CASEDO-41
DIMENSIONS IN INCHES AND (MILLIMETERS)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED.
PARAMETER
SYMBOL
MUR
105
MUR
110
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
MAXIMUM RMS VOLTAGE
MAXIMUM DC BLOCKING VOLTAGE
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
.375(9.5mm) LEAD LENGTH AT TA=55°C
VRRM
VRMS
VDC
IO
50 100
35 70
50 100
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF
SINE-WAVE SUPERIMPOSED ON RATED LOAD
IFSM
TYPICAL THERMAL RESISTANCE (NOTE 2)
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
RθJA
TSTG
TJ
MUR
115
150
105
150
MUR
120
200
140
200
MUR
140
400
280
400
1.0
35
50
-55 TO + 150
-55 TO + 150
MUR
160
600
480
600
MUR
180
800
560
800
MUR
1100
UNITS
1000 V
700 V
1000 V
A
A
/W
ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED)
PARAMETER
SYMBOL
MUR
105
MUR
110
MUR
115
MUR
120
MUR
140
MUR
160
MUR
180
MUR
1100
UNITS
MAXIMUM FORWARD VOLTAGE AT 1A
MAXIMUM DC REVERSE CURRENT
25
100
VF
IR
0.875
2
1.25 1.75
5
50
V
μA
TYPICAL JUNCTION CAPACITANCE (NOTE 1)
CJ
70 pF
MAXIMUM REVERSE RECOVERY TIME(NOTE 3)
TRR 25
50 75 nS
NOTE: 1. MEASURED AT 1 MHz AND APPLIED REVERSE VOLTAGE OF 4.0 VOLTS
2. BOTH LEADS ATTATCHED TO HEATSINK 20×20×1t(mm) COPPER PLATE AT LEAD LENTH 5mm
3. REVERSE RECOVERY TEST CONDITIONS: IF=0.5A, IR=1.0A, IRR=0.25A
PAGE.1



MUR160
2
SINGLE PHASE HALF WAVE 60Hz
1.5 RESISTIVE OR INDUCTIVE LOAD
1
0.5
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE(°C)
Fig.1-TYPICAL FORWARD CURRENT
DERATING CURVE
140100
35
30
25 1
2100
105.1
10
5
00.011
8.3 ms SINGLE HALF SINE
WA+V1E50(JEDEC METHOD)
+25℃
f=1MHz
Vsig=50mVp-p
TJ=25°C
101.1 0.3 0.5 01.1700 0.9 1.1 1.3100
NUMBER OF CYCLES AT 60 Hz
Fig.2-MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
1000
TJ=25°C
100
10
1
0.1 1 10 100
REVERSE VOLTAGE(V)
Fig.3-TYPICAL JUNCTION CAPACITANCE
10
MUR105~120
1
0.1
0.01
MUR140~1100
0.001
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE(V)
Fig.4-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
TJ=125°C
10
TJ=80°C
1
TJ=25°
0.1
0.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)
Fig.5-TYPICAL REVERSE CHARACTERISTICS
PAGE.2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)