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13N60M2 Dataheets PDF



Part Number 13N60M2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel MOSFET
Datasheet 13N60M2 Datasheet13N60M2 Datasheet (PDF)

STB13N60M2, STD13N60M2 Datasheet N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFETs in D²PAK and DPAK packages TAB TAB 2 3 1 D2PAK 23 1 DPAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS@TJMAX. RDS(on) max. ID STB13N60M2 STD13N60M2 650 V 0.38 Ω 11 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Package D²PAK DPAK Applications • Switching applications Description These devices are N-channel.

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STB13N60M2, STD13N60M2 Datasheet N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFETs in D²PAK and DPAK packages TAB TAB 2 3 1 D2PAK 23 1 DPAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS@TJMAX. RDS(on) max. ID STB13N60M2 STD13N60M2 650 V 0.38 Ω 11 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Package D²PAK DPAK Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STB13N60M2 STD13N60M2 Product summary Order code STB13N60M2 Marking 13N60M2 Package D²PAK Packing Tape and reel Order code STD13N60M2 Marking 13N60M2 Package DPAK Packing Tape and reel DS9632 - Rev 5 - February 2019 For further information contact your local STMicroelectronics sales office. www.st.com STB13N60M2, STD13N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V. Value ± 25 11 7 44 110 15 50 - 55 to 150 Unit V A A A W V/ns °C Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-pcb (1) Thermal resistance junction-pcb 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. Value D²PAK DPAK 1.14 30 50 Unit °C/W Table 3. Avalanche characteristics Symbol IAR EAS Parameter Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax.) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) Value Unit 2.8 A 125 mJ DS9632 - Rev 5 page 2/23 STB13N60M2, STD13N60M2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off-states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS IGSS VGS(th) RDS(on) Zero-gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source onresistance VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, TC = 125 °C (1) VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 5.5 A 1. Defined by design, not subject to production test. Min. Typ. Max. Unit 600 V 1 µA 100 µA ±10 µA 2 3 4 V 0.35 0.38 Ω Table 5. Dynamic Symbol Parameter Test conditions Mi.


STFI13N60M2 13N60M2 STB13N60M2


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