Document
STB13N60M2, STD13N60M2
Datasheet
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFETs in D²PAK and DPAK packages
TAB
TAB
2
3 1 D2PAK
23 1
DPAK
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code
VDS@TJMAX.
RDS(on) max.
ID
STB13N60M2 STD13N60M2
650 V
0.38 Ω
11 A
• Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected
Package D²PAK DPAK
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Product status link STB13N60M2 STD13N60M2
Product summary
Order code
STB13N60M2
Marking
13N60M2
Package
D²PAK
Packing
Tape and reel
Order code
STD13N60M2
Marking
13N60M2
Package
DPAK
Packing
Tape and reel
DS9632 - Rev 5 - February 2019 For further information contact your local STMicroelectronics sales office.
www.st.com
STB13N60M2, STD13N60M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V.
Value ± 25 11
7 44 110 15 50
- 55 to 150
Unit V A A A W
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
Value
D²PAK
DPAK
1.14
30
50
Unit °C/W
Table 3. Avalanche characteristics
Symbol IAR EAS
Parameter Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax.) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
Value Unit
2.8
A
125 mJ
DS9632 - Rev 5
page 2/23
STB13N60M2, STD13N60M2
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off-states
Symbol Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS VGS(th) RDS(on)
Zero-gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source onresistance
VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, TC = 125 °C (1) VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
600
V
1
µA
100
µA
±10
µA
2
3
4
V
0.35 0.38
Ω
Table 5. Dynamic
Symbol Parameter
Test conditions
Mi.