STD13N60M2

STD13N60M2 Datasheet N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS at TJ max. RDS(on) max. ID STD13N60M2 650 V 380 mΩ 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching applications Description AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STD13N60M2 Product summary Order code STD13N60M2 Marking 13N60M2 Package DPAK Packing Tape and reel DS9632 - Rev 6 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STD13N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDS (peak) <...