Silicon Super Fast Recovery Diode
Silicon Super Fast Recovery Diode
Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive
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Description
Silicon Super Fast Recovery Diode
Features High Surge Capability Types from 50 V to 200 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
MUR5005 thru MUR5020R
VRRM = 50 V - 200 V IF = 50 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR5005 (R)
MUR5010 (R)
MUR5020 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage
Continuous forward current
VRRM
VRMS VDC
IF
TC ≤ 125 °C
50
35 50
50
100 200
70 140 100 200
50 50
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
Tj Tstg
600
-55 to 150 -55 to 150
600
-55 to 150 -55 to 150
600
-55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MUR5005 (R)
Diode forward voltage
Reverse c...
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