BFR92,S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter...
BFR92,S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Colfector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO vCBO v EBO
"C
THERMAL CHARACTERISTICS
Characteristic
'Total Device Dissipation, T/\ = 25°C Derate above 25"C
Symbol PD
Storage Temperature
T stg
'Thermal Resistance Junction to Ambient
R 0JA
mmPackage mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown VoltageO) dc = 10 mA)
Collector-Base Breakdown Voltage dC = 10 tiA)
Emitter-Base Breakdown Voltage
=(IE 100 uA)
Collector Cutoff Current
(VC E = 10 V)
Collector Cutoff Current
(VC B = 10 V)
Emitter Cutoff Current (VEB = 1.0 V)
ON CHARACTERISTICS
DC Current Gain dC = 500 *iA, VC e = 10 V) dC = 3.0 mA, VC e = 1.5 V) dC = 14 mA, VCe = 10 VHP
Collector-Emitter Saturation VoltageO)
dC = 25 mA, Ib = 5.0...
