MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO v EBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Totai Device Dissipation, T/\ = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
RftJA
Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 12 15
2.0 25
Max
350 2.8 150 357
Unit . Vdc
Vdc Vdc mAdc
Unit
mW
mwrc
°C °C/W
BFR93.S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage c(l = 10 mA)
Collector-Base Breakdown Voltage 0C = 10 mA)
Emitter-Base Breakdown Voltage
E(l = 100 *iA)
_____
Collector Cutoff Current
(VCE = 10 V)
Collector Cutoff Current
(VCB = 10 V)
Emitter Cutoff Current
(VEB = 1.0 V) ON CHARACTERISTICS
DC Current Gain
c(l = 1.0 mA, Vce = 5.0 V) c(l = 20...