SIGNAL DIODE. 1N4150 Datasheet


1N4150 DIODE. Datasheet pdf. Equivalent


Part Number

1N4150

Description

SIGNAL DIODE

Manufacture

WILLAS

Total Page 2 Pages
Datasheet
Download 1N4150 Datasheet


1N4150
WILLAS
1N4150
SC
VO
0.1AMP Sch
1N4150 SIGNAL DIODE
Pb Free Product
Absolute Maximum Ratings (Ta=25°C)
FEATUDRimEenSsions (DO-35)
Items
Reverse Voltage
Reverse Recovery
T im e
Power Dissipation
Symbol
VR
trr
P
Ratings
50
4
500
Unit
V
ns
mW
* Extremely Low VF
* Extremely thin package
* Low stored charge
1.02(26.0)
* Majority carrier conduction
MIN.
.022(0.55)
.018(0.45)
3.33mW /°C (25°C)
Forward Current
IF
200 mA
Junction Temp.
Storage Temp.
Tj -65 to 200 °C
Tstg -65 to 200 °C
.153(3.6)
.132(3.0)
.059 (1.5)
Mechanical Data
Item s
Materials
Package
DO-35
MECHANICAL DATA
.087(2.2)
.067(1.7)
* Case:Molded plastic, JEDEC SOD-323(SC-76)
1.02(26.0)
* Terminal : Solder plated, solderaMbINle. per MIL-STD-750,
.043 (1.1)
Case
Lead/Finish
Chip
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
Dimensions in millimeters
.0
Electrical Characteristics (Ta=25°C)
Ratings
Breakdown Voltage
IR= 5.0uA
Peak Forward Surge Current PW = 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= -IR= 10-200mA, to 0.1 IF
* Weight : 0.000159 ounce, 0.0045 gram
Markin
Symbol
Ratings
Unit
BV V
50
MAXIMUMIFsRurgAeTING AN1D.0 ELECTRICA AL CHAR
VF V
Rating 25oC ambient temperature unless otherw1i.s0e specified.
Single phase half waveI,R60Hz, resistive of inductive load.
uA
For capacitive load, derate current by 20% 0.10
100
ParameterC j
Conditions pF
Sy
Repetitive Peak Reverse Voltage
2.5
Continuous Reverse Votlrtarge
Forward Voltage
I F = 104mA DC
I F = 100mA DC
ns
Reverse Current
VR = 10V DC
Mean Rectifying Current
Peak forward surge current
Capacitance between terminals
Operating Temperature
Storage Temperature
T
WILLAS ELECTRONIC CORP.

1N4150
1N4150
FElectrical characteristic curves (Ta = 25°C unless specified otherwise)
WILLAS
WILLAS ELECTRONIC CORP.


Features WILLAS 1N4150 SC VO 0.1AMP Sch 1N4150 SIGNAL DIODE Pb Free Product Absolut e Maximum Ratings (Ta=25°C) FEATUDRim EenSsions (DO-35) Items Reverse Voltag e Reverse Recovery T im e Power Dissipa tion Symbol VR trr P Ratings 50 4 500 Unit V ns mW * Extremely Low VF * E xtremely thin package * Low stored cha rge 1.02(26.0) * Majority carrier con duction MIN. .022(0.55) .018(0.45) 3 .33mW /°C (25°C) Forward Current IF 200 mA Junction Temp. Storage Temp. Tj -65 to 200 °C Tstg -65 to 200 °C .153(3.6) .132(3.0) .059 (1.5) Mecha nical Data Item s Materials Package DO-35 MECHANICAL DATA .087(2.2) .067 (1.7) * Case:Molded plastic, JEDEC SOD -323(SC-76) 1.02(26.0) * Terminal : Sol der plated, solderaMbINle. per MIL-STD- 750, .043 (1.1) Case Lead/Finish Chip Hermetically sealed glass Double stud /Solder Plating Glass Passivated Metho d 2026 * Polarity : Indicated by cathod e band * Mounting Position : Any Dimen sions in millimeters .112 (2.85) .100 (2.55) .004 (0.1) .0 E.
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