1N4150 SWITCHING DIODE Datasheet

1N4150 Datasheet, PDF, Equivalent


Part Number

1N4150

Description

HIGH SPEED SILICON SWITCHING DIODE

Manufacture

TRANSYS

Total Page 2 Pages
Datasheet
Download 1N4150 Datasheet


1N4150
Transys
Electronics
LIMITED
HIGH SPEED SILICON SWITCHING DIODE
1N4150
DO-35
Glass Axial Package
FEATURES
General Purpose used in Computer and Industrial Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL
Reverse Voltage (Continuous)
Forward Current (DC)
Repetitive Peak Forward Current
VR
IF
IFRM
Non Repetitive Peak Surge Current
Power Dissipation @ Ta=25oC
Derating Factor
tp=1µs
tp=1s
IFSM
PTA
Operating And Storage Junction
Temperature Range
Tj, Tstg
VALUE
50
300
600
4000
500
500
2.85
-65 to +200
UNIT
V
mA
mA
mA
mW
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
VF IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IR
VR=50V
VR=50V, Tj=150oC
Cd VR=0, f=1MHz
trr IF=10mA to 200mA to
IR=10mA to 200mA
RL=100
Measured @ IR=0.1xIF
VALUE
MIN MAX
0.54 0.62
0.66 0.74
0.76 0.86
0.82 0.92
0.87 1.0
100
100
2.5
4
IF=200mA to 400mA to
IR=200mA to 400mA
RL=100
Measured @ IR=0.1xIF
6
Forward Recovery Time
IF=10mA to IR=1mA
RL=100
Measured @ IR=0.1mA
tfr Switched from I=0 to IF=200mA
tr=0.4ns, tp=100ns,
Duty Cycle<1.0%
Measured @ VF=1V
6
10
UNIT
V
V
V
V
V
nA
µA
pF
ns
ns
ns
ns

1N4150
1N4150
DO-35 Glass Axial Package
AB
A
NOTE: Cathode is marked by Band.
DO-35
Glass Axial Package
DIM MIN MAX
A 25.40
B 3.05 4.15
C 0.46 0.56
D 1.70 2.29
All dimensions are in mm.
DO-35, 52mm Taping Specification
1.5 R MAX.
5.50
4.50
52 mm Taping Specification
1. T & A indicates Axial Tape and Ammo
Packing (52 mm Tape Spacing).
2. 300 mm (min) leader tape on every tape.
3. No. of empty places allowed 0.25%
without consecutive empty places.
4. Ends of leads shall preferably not
protrude beyond the tapes.
5. Components shall be held sufficiently in
the tape or tapes so that they
can not come free in normal handling.
52.0
48.0 11 DIODES
All dimensions are in mm.
DIODE AMMO PACK
TAPES
LEADER
FEED
6.0 ±1.0
52.0 ±2.0 6.0 ±1.0
LABEL
±2.0
255.0
80.0 ±2.0
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
DO-35 T&A
5K/ammo box 0.88 kg/5K pcs
INNER CARTON BOX
Size
Qty
10" x 3.2" x 3.2"
5K
DO-35:- 5000 pcs./Ammo Pack
On request also available
in 26 mm Tape
Size
OUTER CARTON BOX
Qty Gr Wt
12.7" x 12.7" x 20" 125K 25 kgs


Features Transys Electronics LIMITED HIGH SPEED SILICON SWITCHING DIODE 1N4150 DO-35 G lass Axial Package FEATURES General Pu rpose used in Computer and Industrial A pplications ABSOLUTE MAXIMUM RATINGS ( Ta=25oC unless specified otherwise) DE SCRIPTION SYMBOL Reverse Voltage (Con tinuous) Forward Current (DC) Repetitiv e Peak Forward Current VR IF IFRM Non Repetitive Peak Surge Current Power Di ssipation @ Ta=25oC Derating Factor tp =1µs tp=1s IFSM PTA Operating And St orage Junction Temperature Range Tj, T stg VALUE 50 300 600 4000 500 500 2.85 -65 to +200 UNIT V mA mA mA mW mW/ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25 ºC unless specified otherwise) DESCRI PTION SYMBOL TEST CONDITIONS Forward Voltage Reverse Current Diode Capacita nce Reverse Recovery Time VF IF=1mA I F=10mA IF=50mA IF=100mA IF=200mA IR VR=50V VR=50V, Tj=150oC Cd VR=0, f=1 MHz trr IF=10mA to 200mA to IR=10mA t o 200mA RL=100Ω Measured @ IR=0.1xI F VALUE MIN MAX 0.54 0.62 0.66 0.74 0.76 0.86 0.82 0.92 0.87 1.
Keywords 1N4150, datasheet, pdf, TRANSYS, HIGH, SPEED, SILICON, SWITCHING, DIODE, N4150, 4150, 150, 1N415, 1N41, 1N4, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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