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1N4154

EIC

HIGH SPEED SWITCHING DIODE

www.eicsemi.com 1N4154 FEATURES : • High switching speed: max. 2 ns • Reverse voltage:max. 25 V • Repetitive peak rever...


EIC

1N4154

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www.eicsemi.com 1N4154 FEATURES : High switching speed: max. 2 ns Reverse voltage:max. 25 V Repetitive peak reverse voltage:max. 35 V Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Ta = 25 °C unless otherwise noted) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Forward Current Maximum Repetitive Peak Forward Current Maximum Peak Forward Surge Current at tp = 1µs Thermal Resistance Junction to Ambient (l =4mm, TL = constant) Power Dissipation (l = 4mm, TL ≤ 25 °C) Operating Junction Temperature Storage Temperature Range Symbol VRRM VR IF(AV) IF IFRM IFSM RӨJA PD TJ TSTG Value 35 25 150 300 500 2.0 350 500 175 -65 to + 175 Electrical Characteristics (Ta = 25 °C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Reverse Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time IR VR = 25 V - VR = 25 V , Ta = 150 °C - VF IF = 30 mA - V(BR)R IR = 5 µA ,tp/T =0.01,tp=0.3ms 35 Cd f = 1MHz ; VR = 0, VHF = 50mV - IF = IR = 10 mA, iR = 1 mA - Trr IF = 10 mA , VR = 6 V, - RL = 100 Ω, iR= 0.1 x IR 9 100 - 100 0.88 1.0 - - - 4 - 4 - 2 Unit V V mA mA mA A...




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