High Voltage Power Transistor
Pin Configuration 1. Emitter 2. Base 3. Collector
Features:
• Devices with breakdown v...
High Voltage Power
Transistor
Pin Configuration 1. Emitter 2. Base 3. Collector
Features:
Devices with breakdown voltages of 160V minimum
NPN Silicon High Voltage Power
Transistors
Absolute Maximum Ratings:
(Ta = 25°C unless otherwise specified) Characteristic
Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current-Peak Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating Storage Temperature Range Thermal Resistance Junction to Ambient in Free Air Junction to Case
Symbol VCBO VCES VEBO IC ICM
PD
Tj, Tstg
Rth(j-a) Rth(j-c)
Value
300
5 100 300
1 5.7 5 28.57 -65 to +200
175 35
Unit V
A
W mW/°C
°C
°C/W
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22/10/12 V1.0
High Voltage Power
Transistor
Electrical Characteristics:
(Ta = +25°C unless otherwise specified)
Parameter
Symbol
Collector Emitter Voltage Collector Base Voltage Emit...
