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MFE121 Dataheets PDF



Part Number MFE121
Manufacturers Digitron Semiconductors
Logo Digitron Semiconductors
Description DUAL GATE MOSFETS
Datasheet MFE121 DatasheetMFE121 Datasheet (PDF)

MFE120-MFE122 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Drain Source Voltage Drain Current Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDS ID PD TJ, Tstg.

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MFE120-MFE122 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Drain Source Voltage Drain Current Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDS ID PD TJ, Tstg Value 25 30 300 1.7 -65 to +175 Unit Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Drain Source Breakdown Voltage (ID = 100 µAdc, VS = 0, VG1S = -4.0 Vdc, VG2S = 4.0V) Gate 1 – Source Breakdown Voltage (1) (IG1 = ±10 µAdc, VG2S = 0) Gate 2 – Source Breakdown Voltage (1) (IG2 = ±10 µAdc, VG2S = 0) Gate 1 Leakage Current (VG1S = ±6.0 Vdc, VG2S = 0, VDS = 0) Gate 2 Leakage Current (VG2S = .


MFE120 MFE121 MFE122


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