2N4352

. MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Trj = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol vds Vdg Vgs "G PD pd Tj T stq Value 25 30 ±30 30 300 1,7 800 4.56 175 -65 to +175 Unit Vdc Vdc Vdc mAdc mW mW/°C mW mVWC °C °C 2N4352 CASE 20-03, STYLE 2 TO-72 (TO-206AF) MOS FET SWITCHING P-CHANNEL — ENHANCEMENT ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.] Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage D(l = -10 mA, Vqs = o) Zero-Gate-Voltage Drain Current (vDs = - 10 v, vqs = o) ta = 25°c TA = 150°C Gate Reverse Current (Vqs = ±30V, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage (V DS = -10 V, Dl = -10/iA) Drain-Source On-Voltage (Iq = -2.0 mA, Vqs = -10 V) On-State Drain Current (Vqs = -iovDS = -lov) SMALL-SIGNAL CHARACTERISTICS Drain-Source Resistance (V...