HIGH-FREQUENCY AMPLIFIER JFET
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation TA = 25°C
Derate ab...
Description
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation TA = 25°C
Derate above 25°C (Free Air)
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Lead Temperature (1/16" from Case for 10 Seconds)
Storage Temperature Range
Symbol VDG Vgs
IQ
PD
Pd
tl
Tstg
Value 30 -30 50 360 2.88 500 4.0 260
- 65 to + 1 50
Unit Vdc Vdc
mA
mW
mW/°C
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage (lG = -1.0/^A, V DS = 0)
Gate Reverse Current
(VGS = -20V,VDS = 0)
Gate 1 Leakage Current
(VG1S = -20 V, V D S = 0, TA = 100°C)
Gate Source Cutoff Voltage (Vqs = 15 V, Id = 10 mA)
ON CHARACTERISTICS
2N5245 2N5246 2N5247
Zero-Gate-Voltage Drain Current
(Vds = 15 V, V GS = 0, Pulsed: See Note 1)
SMALL-SIGNAL CHARACTERISTICS
2N5245 2N5246 2N5247
Forward Transfer Admittance
(VQS = 15 V, Vqs = 0, f = 1.0 kHz)
2N5245 2N5246 2N5247
Input Admittance (v D s = 1...
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