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2N915

Motorola

NPN silicon annular transistor

2N915 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N3946 for graphs. MAXIMUM RAT...


Motorola

2N915

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2N915 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N3946 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C @Total Power Dissipation + 100°C Case Operating and Storage Temperature Temperature Range Symbol v CEO VCBO VEBO pd pd Pd Tj, Tstg Value 50 70 5.0 0.36 2.05 1.2 6.81 0.68 - 65 to + 200 Unit Vdc Vdc Vdc Watts mW/°C Watts mW/°C W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) dC = 10 mAlB = 0) Collector-Base Breakdown Voltage dC = 100 ^ A El = 0) Emitter-Base Breakdown Voltage (IE = 10 mA, Ic = 0) Collector Cutoff Current (Vcb = 60 V, El = 0) Collector Cutoff Current (VC B = 60 V, El = 0) (Vcb = 60 V, El = 0, TA = + 150°C) ON CHARACTERISTICS DC Current Gain dC = 10 mA Vc E = 5....




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