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2N916

Motorola

NPN silicon annular transistor

2N916 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipa...


Motorola

2N916

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2N916 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (S Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO Pd Pd TJ- Tstg Value 25 45 5 0.36 2.06 1.2 6.9 - 65 to + 200 Unit Vdc Vdc Vdc Watts mWVC Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltaged) Oc = 30 mA, Ib = 0) Collector-Base Breakdown Voltage Oc = 10 mA, Ie = 0) Emitter-Base Breakdown Voltage (Ie = 10 fjA, lc = 0) Collector Cutoff Current (Vqb = 30 V, lg = 0) Collector Cutoff Current <& 150°C (Vcb = 30 V, lg = 0) ON CHARACTERISTICS DC Current Gaind) c(l = 10 mA, V C E = 10 V) c(l = 10 mA, VC e = 1.0 V, - 55°C) Collector-Emitter Saturation Voltage OC = 10 mA, Ib = 1.0 mA) Base-Emitter Saturation Voltage Oc = 10 mA, Ib = 1.0 mA) SMALL-SIGNAL C...




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