NPN silicon annular transistor
2N916
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipa...
Description
2N916
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation (S Ta = 25°C Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO
Pd
Pd
TJ- Tstg
Value 25 45 5 0.36 2.06
1.2 6.9
- 65 to + 200
Unit Vdc Vdc Vdc
Watts
mWVC
Watts mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS Collector-Emitter Sustaining Voltaged) Oc = 30 mA, Ib = 0) Collector-Base Breakdown Voltage Oc = 10 mA, Ie = 0) Emitter-Base Breakdown Voltage (Ie = 10 fjA, lc = 0) Collector Cutoff Current (Vqb = 30 V, lg = 0) Collector Cutoff Current <& 150°C (Vcb = 30 V, lg = 0) ON CHARACTERISTICS
DC Current Gaind)
c(l = 10 mA, V C E = 10 V) c(l = 10 mA, VC e = 1.0 V,
- 55°C)
Collector-Emitter Saturation Voltage
OC = 10 mA, Ib = 1.0 mA)
Base-Emitter Saturation Voltage
Oc = 10 mA, Ib = 1.0 mA)
SMALL-SIGNAL C...
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