PURPOSE TRANSISTOR. MD2369 Datasheet

MD2369 TRANSISTOR. Datasheet pdf. Equivalent

MD2369 Datasheet
Recommendation MD2369 Datasheet
Part MD2369
Description DUAL GENERAL PURPOSE TRANSISTOR
Feature MD2369; MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collec.
Manufacture Motorola
Datasheet
Download MD2369 Datasheet




Motorola MD2369
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
MD2369AB
MD2369F,AF,BF
MQ2369
Derate above 25°C
MD2369AB
MD2369F,AF,BF
MQ2369
Total Device Dissipation
@ TC = 25°C
MD2369,A,B
MD2369F,AF,BF
MQ2369
Derate above 25°C
MD2369AB
MD2369F,AF,BF
MQ2369
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VCBO
v EBO
'C
PD
Value
Unit
15 Vdc
40 Vdc
5.0 Vdc
500 mAdc
One Die
All Die
Equal Power
mW
550
350
400
3.14
2.0
2.28
Pd
600
400
600
3.42
2.28
3.42
mW/°C
Watts
TJ. Tstg
1:4
0.7
0.7
2.0
.1.4,
2.8
8.0
4.0
•4.0
11.4
80
16
- 65 to + 200
mW/°C
°C
MD2369,A,B
MD2369F,AF,BF
MQ2369
MD2369,A,B
CASE 654-07, STYLE 1
MD2369F,AF,BF
CASE 610A-04, STYLE 1
MQ2369
CASE 607-04, STYLE 1
DUAL
GENERAL PURPOSE TRANSISTOR
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance Junction to Ambient
MD2369AB
MD2369F,AF,BF
MQ2369
MD2369AB
MD2369F,AF,BF
MQ2369
Symbol
R&jc
RflUAd)
Coupling Factor
MD2369AB
MD2369F,AF,BF
MQ2369 (Q1-Q2)
(Q1-Q3 or Q1-Q4)
(1) RftjA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
c(l = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 10 /uAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 10 jAdc, lc = 0)
Collector Cutoff Current
(VC B =f 20 Vdc, El = 0)
(VcB = 20 Vdc, Ie = 0, Ta = +150°C)
ON CHARACTERISTICS^)
DC Current Gain
dC = 10 mAdc, Vce = 10 Vdc)
dC = 10 mAdc, Vce = vdc' TA = -55°C)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
hFE
One Die
All Die
Equal Power
125 87.5
250 125
250 62.6
319
500
438
Junction to
Ambient
83
75
57
55
292
438
292
Junction to
Case
40
Typ Max
15 - -
40
5.0
- - 0.03
30
40 95 140
20
Unit
"C/W
°c/w
%
Unit
Vdc
Vdc
Vdc
/xAdc
5-49



Motorola MD2369
MD2369,A,B, MD2369F,AF,BF, MQ2369
ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.)
Characteristic
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
Base-Emitter Saturation Voltage
Oc = 10 mAdc, Ib = 1.0 mAdc)
Symbol
vCE(sat)
v BE(sat)
Min
Typ
Max
Unit
- - 0.25
Vdc
0.7
0.85
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product(2)
dC = 10 mAdc, Vqe = 10 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 5.0 Vdc, lg = 0, f ,= 100 kHz)
Input Capacitance
(V B E = 10 Vdc, lc = 0, f = 100 MHz)
fT
C bo
Cjbo
500 800
MHz
— — 4.0 pF
— — 4.0 pF
SWITCHING CHARACTERISTICS
Storage Time
(Vcc = 10 Vdc, lc = >B1 = 'B2 = 10 mAdc)
Turn-On Time
(Vcc = 30 vdc< VBE(off) = 1-5 Vdc, lc = 10 mAdc, Ibi = 3.0 mAdc)
Turn-Off Time
(Vcc = 3.0 Vdc, lc = 10 mAdc, Iq-j = 3.0 mAdc, \q2 = 51 - mAdc)
ts
ton
toff
— — 13 ns
— — 15 ns
20 ns
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
dC = 3.0 mAdc, Vce = 10 Vdc)
- MD2369A, MD2369AF
r>FE1^FE2
0.9
1.0
MD2369B, MD2369BF
0.8 1.0
Base-Emitter Voltage Differential
dC = 3.0 mAdc, Vce = vd<=)
- -MD2369A, MD2369AF
|VBE1-VBE2l
mVdc
5.0
MD2369B, MD2369BF
10
Base-Emitter Voltage Differential Gradient
A<VbE1-V BE2>
/aV/°C
OC = 3.0 mAdc, VCe = 10 Vdc,
Ta = -55 to +125°C)
MD2369A, MD2369AF
ATA
- - 10
MD2369B, MD2369BF
20
(2) Pulse Test: Pulse Width « 300 /as, Duty Cycle 2.0%.
(3) The lowest hpE reading is taken as hpE! for this test.
FIGURE 1 - STORAGE TIME TEST CIRCUIT
+ 10 V
+6.0 V I
I
-4.0 °V -JI --4--
Pulse Width = 300 ns
<t f 1.0 ns
<Duty Cycle 2.0%
FIGURE 2 - TURN-ON TIME
IC/lB = in
Tj ± 25°C
Ir @ Vcc = 3.0 V
_
LJ
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
IC. COLLECTOR CURRENT (mA)
C s <3.0pF
100
70
50
1 30
1 20
10
7.0
5.0
3.0
2.0
1.0
FIGURE 3 TURN-OFFTIME
cc = 10
ic ib = io
Tj = 25" i:-
^ tf
s-
2.0 3.0
5.0 7.0 10
20 30
IC. COLLECTOR CURRENT (mA)
50 70 100
5-50



Motorola MD2369
-1
I
MD2369,A,B, MD2369F,AF,BF, MQ2369
FIGURE 4 - TURN-ON TEST CIRCUIT
V cc = 3.0 V
1.5 V
Pulse Width - 300 ns
<t r 1.0 ns
Duty Cycle<2.0%
FIGURE 6 - CAPACITANCE
c
-O Scope
Tj=25°C
Cob
FIGURE 5 - TURN OFF TEST CIRCUIT
V CC = 3.0 V
Pulse Width = 300 ns
t,< 1.0 ns
Duty Cycle <2.0%
» O Scope
^C S <4.0 P F
FIGURE 7 - CURRENT-GAIN-BANDV\UDTH PRODUCT
11
VcE=10V
f= 1 00 MH z
% 700
0.05 0.1
0.2
0.5 1.0
2.0
5.0
Vr, REVERSE VOLTAGE (VOLTS)
10
20
50
^
i—
* 20
FIGURE 8 - DC CURRENT GAIN
1
1 = 150°C
11— -.
-TTH-
25 °c
- -56 OC
1
;;.
~*
Si
"
; ^:-
E=1.0V
, V(;E = 5.0 V
0.2 0.5 1.0 2.0 5.0 10 20
50 100 200
IC. COLLECTOR CURRENT (mA)
FIGURE 10 - COLLECTOR SATURATION REGION
U Tj = 25°C
OmA 3OmA
i 100 mA
'
0.05
1
0.1
0.2
0.5 1.0 2.0
5.0 10
IB. BASE CURRENT (mA)
20
50
t 200
1.0
2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mAI
50 70 100
FIGURE 9 - "ON" VOLTAGES
1.4
1 1 1 III
T
''
H-
O
<
o
0.2
T
T
t
VfJEI
10- -
[1
"i
-4
4
_4
VCE(sat>ei C /lB = 10
1—"tttt+
:1
0.5 1.0
2.0
5.0
10
FH
BE(on)«" vc E=1.0V-
20 50 100 200
IC, COLLECTOR CURRENT (mA)
+2.0
u
>
E +1
z
o
FIGURE 11 - TEMPERATURE COEFFICIENTS
•APPLIES FOR Ic/lB < hFE^-O
1
*
'VC'or Vce(sat)
25°C to 150°Cx
o
1-
<
s
-
-3.0
02
4'
-55°( to 25°C^**'
J
J_
»VB '"' Vbe
25°Cto 150°C
-it_...
1
T
0.5 1.0
2.0
5.0 10
y -55°C
III lllll
20 50 100 200
IC, COLLECTOR CURRENT (mA)
5-51







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