BFX38,39,40,41
CASE 79, STYLE 1 TO-39 (TO-205AD) HIGH CURRENT TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-E...
BFX38,39,40,41
CASE 79, STYLE 1 TO-39 (TO-205AD) HIGH CURRENT
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
VcEO VCBO VEBO
ic
PD
PD
TJ. T st g
BFX38 BFX40 BFX39 BFX41
55 75 55 75
5
1
1.25 7.15
7
40 -65 to +200
Unit
Vdc Vdc Vdc Adc Watt
mW/°C
Watt
mW/°C
°C
Refer to 2N4405 for graphs.
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Symbol Rhjc
Rwa
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
Characteristic
~~ ~
I
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 10 mA)(1)
Collector-Base Breakdown Voltage dC = 10 (jA)
Emitter-Base Breakdown Voltage OE = 10 nA)
BFX38-39 BFX40-41
BFX38-39 BFX40-41
Collector Cutoff Current
(VcB = 40 V)...