BFX41

BFX38,39,40,41 CASE 79, STYLE 1 TO-39 (TO-205AD) HIGH CURRENT TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VcEO VCBO VEBO ic PD PD TJ. T st g BFX38 BFX40 BFX39 BFX41 55 75 55 75 5 1 1.25 7.15 7 40 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C Refer to 2N4405 for graphs. Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol Rhjc Rwa ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted Characteristic ~~ ~ I OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 10 mA)(1) Collector-Base Breakdown Voltage dC = 10 (jA) Emitter-Base Breakdown Voltage OE = 10 nA) BFX38-39 BFX40-41 BFX38-39 BFX40-41 Collector Cutoff Current (VcB = 40 V)...