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DF5G7M2N

Toshiba

ESD Protection Diodes

ESD Protection Diodes Silicon Epitaxial Planar DF5G7M2N DF5G7M2N 1. Applications ESD Protection Note: This product is ...


Toshiba

DF5G7M2N

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Description
ESD Protection Diodes Silicon Epitaxial Planar DF5G7M2N DF5G7M2N 1. Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit DFN5 1 : I/O 1 2 : GND 3 : I/O 2 4 : I/O 3 5 : I/O 4 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) VESD (Note 1) ±12 kV Electrostatic discharge voltage (IEC61000-4-2)(Air) ±15 Peak pulse power PPK 50 W Peak pulse current IPP (Note 2) 2.5 A Junction temperature Storage temperature Tj 150  Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the...




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