Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL ...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL
TRANSISTORS
BSV15 BSV16 BSV17 TO- 39
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BSV15 BSV16 BSV17
UNIT
Collector -Emitter Voltage
VCEO
40 60
80
V
Collector -Emitter Voltage
VCES
40 60
90
V
Emitter -Base Voltage
VEBO
5.0 5.0
5.0
V
Collector Current (DC)
IC
1.0 A
Base Current (DC)
IB
200 mA
Power Dissipation up to Tamb=25 degC Ptot
0.8 W
Power Dissipation up to Tcase=25 degC
5.0 W
Power Dissipation up to Tmb=50 degC
5.0 W
Operating And Storage Junction
Tj, Tstg
-65 to +200
deg C
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
220 K/W
Junction to Case
Rth(j-c)
35 K/W
Junction to Mounting Base
Rth(j-mb)
30 K/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
BSV15
BSV16 BSV17 UNIT
Collector-Cut off Current
ICES VBE=0, VCE=40V
<100
- - nA
VBE=0,...