NPN SILICON TRANSISTOR
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Collector-Base Voltage
Em...
Description
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tq = 25°C
Tc = 100°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol VCEO VCER
Value 15 20
Unit Vdc Vdc
VCBO VEBO
ic
PD
pd
Tj. T s tg
40
4.5
360 2.06
1.2
6.85
-65 to +200
Vdc Vdc
mAmp
mWatt mW/°C
Watt
mW/°C
°C
Symbol
RfcUC
Max
146
Unit
°C/W
ELECTRICAL CHARACTERISTICS 0a = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0) (IC = 10 mAdc, RBE = 10 Q)
Emitter-Base Breakdown Voltage (IE = 10 nAdc, Ic = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0) (VcB = 20 Vdc, IE = 0, Tj = 150°C)
Collector Cutoff Current
(Vce = 1 5 Vdc, Vbe = 0, Tj = 55°...
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