2N930
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
0.48 (0.019) 0.41 (...
2N930
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
12.7 (0.500) 5.33 (0.210)
min.
4.32 (0.170)
BIPOLAR
NPN SILICON AMPLIFIER
TRANSISTORS
FEATURES
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
HERMETICALLY SEALED METAL PACKAGE CECC SCREENING OPTIONS AVAILABLE SPACE QUALITY LEVELS AVAILABLE
31 2
TO18 (TO-206AA) PACKAGE
Underside View Pin 1 =Emitter Pin 2 = Base Pin 3 = Collector
APPLICATIONS:
The 2N930 is designed for small general purpose and amplifier applications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC Collector Current
PD Total Device Dissipation @ TA =25°C
Derate above 25°C
45V 45V 5V 30mA 0.5W 350°C / W
PD Total Device Dissipation @ TC =25°C Derate above 25°C
1.2W 146°C / W
TSTG , TJ
Operating and Storage Temperature Range
–6...
