2N1893

2N1711 For Specifications, See 2N718A Data. 2N1893 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous - @Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation (S Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO VCER VCBO VEBO ic PD pd Tj, Tstg Value 80 100 120 7.0 0.5 0.8 4.57 3.0 17.2 - 65 to + 200 Unit Vdc Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C Refer to 2N3019 for graphs. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R&jc R&JA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 100 mAdc, RgE = 1° ohms) Collector-Emitter Sustaining Voltaged) (Ic = 30 mAdc, lg = 0) ...