2N2418B

DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Power dissipation(1) PD 350 RMS emitter current IE 70 Peak pulse emitter current (2) ie 2 Emitter reverse voltage VB2E 60 Interbase voltage VB2B1 65 Operating junction temperature range TJ -65 to 175 Storage temperature range Tstg -65 to 175 Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry. Note 2: Capacitor discharge – 10µF or less, 30 volts or less. Unit mW mA Amps Volts Volts °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Intrinsic standoff ratio (VB2B1 = 10V) (1) 2N2417, 2N2417A, 2N2417B 2N2418, 2N2418A, 2N2418B 2N2419, 2N2419A, 2N2419B 2N2420, 2N2420A, 2N2420B 2N2421, 2N2421A, 2N2422B 2N2422, 2N2422A, 2N2422B Interbase resistance (VB2B1 = 3V, IE = 0) 2N2417, 2N2417A, 2N2417B 2N2418, 2N2418A, 2N2418B 2N2419, 2N2419A, 2N2419...