SMD Type
Schottky Barrier Diodes MMBD101
Diodes
Features
Low Noise Figure-6.0dB
[email protected] Very Low Capacitance-Less Than 1.0pF@zero Volts High Forward Conductance-0.5volts(typ)@IF=10mA
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute M axim um Ratings Ta = 25
Param eter Reverse voltage Forward Power Dissipation
@TA = 25 Derate above 25 Junction tem perature Storage tem perature range
Sym bol VR
pF
Tj T stg
V a lu e 7.0
U n it V
280 2.2 150 -55 to +150
mW mW/
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Electrical Characteristics Ta = 25
Parameter Reverse Breakdown Voltage Diode Capacitance Forward Voltage Reverse Leakage
Symbol V(BR)R
CT VF IR
Conditions IR= 10 A VR= 0,f =1.0MHz,Note1 IF= 10 mA VR= 3.0 V
Min 7.0
Typ 10 0.88 0.5 0.02
Max
1.0 0.6 0.25
Unit V pF V A
Marking
Marking
4M
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