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2N2647 Dataheets PDF



Part Number 2N2647
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON PN UNIJUNCTION TRANSISTORS
Datasheet 2N2647 Datasheet2N2647 Datasheet (PDF)

2N2646 2N2647 SILICON PN UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications. MARKING: FULL PART NUMBER TO-18 (UJT) CASE MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage SYMBOL VB2E Interbase Voltage VB2B1 RMS Emitter Current Ie Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps) ie RMS Power Dissipation PD Operating and .

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2N2646 2N2647 SILICON PN UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications. MARKING: FULL PART NUMBER TO-18 (UJT) CASE MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage SYMBOL VB2E Interbase Voltage VB2B1 RMS Emitter Current Ie Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps) ie RMS Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg 30 35 50 2.0 300 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2646 SYMBOL TEST CONDITIONS MIN MAX VB2B1=10V 0.56 0.75 RBB VB2B1=3.0V 4.7 9.1 IEB2O VB2E=30V - 12 IV VB2B1=20V, RB2=100Ω 4.0 - IP VB2B1=25V - 5.0 VOB1 V1=20V 3.0 - 2N2647 MIN MAX 0.68 0.82 4.7 9.1 - 0.2 8.0 18 - 2.0 6.0 - UNITS V V mA A mW °C UNITS kΩ μA mA μA V R1 (2-December 2013) 2N2646 2N2647 SILICON PN UNIJUNCTION TRANSISTORS T.


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