MU4891-MU4894
High-reliability discrete products and engineering services since 1977
SILICON UNIJUNCTION TRANSISTOR
F...
MU4891-MU4894
High-reliability discrete products and engineering services since 1977
SILICON UNIJUNCTION
TRANSISTOR
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS. Rating
Symbol
Value
Power dissipation(1)
PD 300
RMS emitter current
IE 50
Peak pulse emitter current (2)
iE 1.0
Emitter reverse voltage
VB2E 30
Storage temperature range
Tstg -65 to 150
Note 1: Derate 3mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry. VB2B1 = √(RBB · PD) Note 2: Capacitance discharge must fall to 0.37 Amp within 3.0ms and PRR ≤ 10PPS.
Unit mW mA Amps Volts °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter
Symbol
Min Typ
Intrinsic standoff ratio (VB2B1 = 10V) (1)
MU4892 MU4891, MU4893
MU4894
η
0.5...