Power Transistors. 2N6543 Datasheet

2N6543 Transistors. Datasheet pdf. Equivalent

Part 2N6543
Description Silicon NPN Power Transistors
Feature SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N6542 2N6543 DESCRIPTI.
Manufacture SavantIC
Datasheet
Download 2N6543 Datasheet

2N6543 Datasheet
SavantIC Semiconductor Silicon NPN Power Transistors Produc 2N6543 Datasheet
2N6543 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 2N6543 Datasheet
Recommendation Recommendation Datasheet 2N6543 Datasheet




2N6543
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6542 2N6543
DESCRIPTION
·With TO-3 package
·High voltage,high speed
APPLICATIONS
·Switching regulators
·PWM inverters and motor controls
·Solenoid and relay drivers
·Deflection circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N6542
2N6543
Open emitter
VCEO
Collector-emitter voltage
2N6542
2N6543
Open base
VEBO
IC
ICM
IB
IE
IEM
PD
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Emitter current
Emitter current-peak
Total Power Dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
650
850
300
400
8
5
10
5
10
20
100
200
-65~200
UNIT
V
V
V
A
A
A
A
A
W



2N6543
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6542 2N6543
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6542
2N6543
IC=0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A
VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1.0A
VBEsat
ICEV
IEBO
Base-emitter saturation voltage
Collector cut-off current
2N6542
2N6543
Emitter cut-off current
IC=3A; IB=0.6A
VCE=650V; VBE(off)=1.5V
TC=100
VCE=850V; VBE(off)=1.5V
TC=100
VEB=8V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
fT Trainsistion frequency
Switching times
IC=1.5A ; VCE=2V
IC=3A ; VCE=2V
IC=0.2A ; VCE=10V;f=1MHz
td Delay time
tr Rise time
tstg Storage time
VCC=250V; IC=3.0A
IB1=-IB2=0.6A;tp=0.1ms
tf Fall time
MIN TYP. MAX UNIT
300
V
400
1.0 V
5.0 V
1.4 V
0.5
3.0
mA
0.5
3.0
1.0 mA
12 60
7 35
6 35 MHz
0.05 µs
0.7 µs
4.0 µs
0.8 µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.75
UNIT
/W
2





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