POWER TRANSISTOR. 2N6545 Datasheet

2N6545 TRANSISTOR. Datasheet pdf. Equivalent

Part 2N6545
Description NPN SILICON POWER TRANSISTOR
Feature 2N6544 2N6545 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CE.
Manufacture Central Semiconductor
Datasheet
Download 2N6545 Datasheet

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Saf 2N6545 Datasheet
2N6545 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 2N6545 Datasheet
2N6544 2N6545 NPN SILICON POWER TRANSISTOR w w w. c e n t r 2N6545 Datasheet
Recommendation Recommendation Datasheet 2N6545 Datasheet




2N6545
2N6544
2N6545
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6544, 2N6545
types are Silicon NPN Triple Diffused Mesa Transistors
designed for high voltage, high current, high speed
switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Emitter Current
Peak Emitter Current
Continuous Base Current
Peak Base Current
Power Dissipation
Power Dissipation, TC=100°C
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEX
VCEO
VEBO
IC
ICM
IE
IEM
IB
IBM
PD
PD
TJ, Tstg
ΘJC
2N6544
2N6545
650 850
350 450
300 400
9.0
8.0
16
16
32
8.0
16
125
71.5
-65 to +200
1.4
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6544
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEV, VBE=1.5V
- 0.5
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
- 2.5
ICER
VCE=Rated VCEV, RBE=50Ω, TC=100°C
- 3.0
IEBO
VEB=9.0V
- 1.0
BVCEX
VCL=Rated VCEX, IC=4.5A, TC=100°C
350 -
BVCEX
VCL=Rated VCEO-100V, IC=8.0A, TC=100°C 200 -
BVCEO IC=100mA
300 -
VCE(SAT) IC=5.0A, IB=1.0A
- 1.5
VCE(SAT) IC=8.0A, IB=2.0A
- 5.0
VCE(SAT) IC=5.0A, IB=1.0A, TC=100°C
- 2.5
VBE(SAT) IC=5.0A, IB=1.0A
- 1.6
VBE(SAT) IC=5.0A, IB=1.0A, TC=100°C
- 1.6
hFE VCE=3.0V, IC=2.5A
12 60
hFE VCE=3.0V, IC=5.0A
7.0 35
2N6545
MIN MAX
- 0.5
- 2.5
- 3.0
- 1.0
450 -
300 -
400 -
- 1.5
- 5.0
- 2.5
- 1.6
- 1.6
12 60
7.0 35
UNITS
V
V
V
V
A
A
A
A
A
A
W
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
R1 (7-February 2011)



2N6545
2N6544
2N6545
NPN SILICON
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP MAX
ft VCE=10V, IC=300mA, f=1.0MHz
Cob VCB=10V, IE=0, f=1.0MHz
Is/b VCE=100V, t=1.0s
6.0
75
0.2
28
300
Resistive Load
td
tr
ts
tf
VCC=250V, IC=5.0A,
IB1=IB2=1.0A, tp=100μs,
Duty Cycle≤2.0%
0.05
1.0
4.0
1.0
Inductive Load (Clamped)
ts VCL=Rated VCEX, IC=5.0A,
tf IB1=1.0A, VBE=5.0V, TC=100°C
4.0
0.9
ts VCL=Rated VCEX, IC=5.0A,
tf IB1=1.0A, VBE=5.0V, TC=25°C
1.2
0.18
TO-3 CASE - MECHANICAL OUTLINE
UNITS
MHz
pF
A
μs
μs
μs
μs
μs
μs
μs
μs
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R1 (7-February 2011)





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