MFQ930C
MFQ960C
MFQ990C
MAXIMUM RATINGS
Rating
Symbol MFQ930C MFQ960C MFQ990C
CASE 632-02, STYLE 1
TO-116
QUAD
DUAL...
MFQ930C
MFQ960C
MFQ990C
MAXIMUM RATINGS
Rating
Symbol MFQ930C MFQ960C MFQ990C
CASE 632-02, STYLE 1
TO-116
QUAD
DUAL-IN-LINE
TMOS
N-CHANNEL — ENHANCEMENT
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current Continuous (1) Pulsed (2)
vDs vDg vgs
id
Idm
@Total Device Dissipation T/\ = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
35 60 90 35 60 90
±30
2.0 3.0
Each
Total
Transistor Device
PD TJ. Tstg
0.5 17.0
2.0 66.6
- 55 to + 1 50
Refer to MFE930 for graphs. ELECTRICAL CHARACTERISTICS (TA
25°C unless otherwise noted.)
Characteristic
Symbol
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (Vgs = o, Iq = 10 mA)
mfq93oc MFQ960C MFQ990C
Gate Reverse Current
Drain-Source On-Voltage (Vqs = 10 V) D
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