CONTROLLED RECTIFIERS. 2N6504 Datasheet

2N6504 RECTIFIERS. Datasheet pdf. Equivalent


Part 2N6504
Description SILICON CONTROLLED RECTIFIERS
Feature MOTOROLA SEMICONDUCTOR TECHNICAL DATA Thyristors Silicon Controlled Rectifiers . . . designed primar.
Manufacture Motorola
Datasheet
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2N6504
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Thyristors
Silicon Controlled Rectifiers
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Order this document
by 2N6504/D
2N6504
thru
2N6509*
*Motorola preferred devices
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
* Peak Forward and Reverse Blocking Voltage(1)
(Gate Open, TJ = 25 to 125°C)
2N6504
2N6505
2N6506
2N6507
2N6508
2N6509
Symbol
VDRM, VRRM
Value
50
100
200
400
600
800
Unit
Volts
Forward Current (TC = 85°C)
(180° Conduction Angle)
Peak Non-repetitive Surge Current — 8.3 ms
(1/2 Cycle, Sine Wave)
1.5 ms
IT(RMS)
IT(AV)
ITSM
25
16
300
350
Amps
Amps
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
*THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
20
0.5
2
–40 to +125
–40 to +150
Watts
Watt
Amps
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 1.5 °C/W
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1



2N6504
2N6504 thru 2N6509
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
* Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
* Forward “On” Voltage(1)
(ITM = 50 A)
TJ = 25°C
TJ = 125°C
* Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
TC = 25°C
TC = –40°C
* Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = –40°C)
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
* Holding Current
(Anode Voltage = 12 Vdc, TC = –40°C)
* Turn-On Time
(ITM = 25 A, IGT = 50 mAdc)
Turn-Off Time (VDRM = rated voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated VDRM, Exponential Waveform)
*Indicates JEDEC Registered Data.
p p1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
Symbol
IDRM, IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
dv/dt
Min Typ Max Unit
— — 10 µA
——
2 mA
— — 1.8 Volts
— — 40 mA
— 25 75
— 1 1.5 Volts
0.2 —
— Volts
— 35 40 mA
— 1.5 2 µs
µs
— 15 —
— 35 —
— 50 — V/µs
FIGURE 1 — AVERAGE CURRENT DERATING
130
120 α
α = CONDUCTION ANGLE
110
100
90
80
0
α = 30°
60° 90°
180°
dc
4.0 8.0 12 16
IT(AV), ON-STATE FORWARD CURRENT (AMPS)
20
FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION
32
24 α
α = CONDUCTION ANGLE 60°
α = 30°
16
90°
180°
dc
TJ = 125°C
8.0
0
0 4.0 8.0 12 16 20
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
2 Motorola Thyristor Device Data







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