CONTROLLED RECTIFIERS. 2N6504 Datasheet

2N6504 RECTIFIERS. Datasheet pdf. Equivalent


Part 2N6504
Description SILICON CONTROLLED RECTIFIERS
Feature 2N6504-2N6509 High-reliability discrete products and engineering services since 1977 SILICON CONTR.
Manufacture Digitron Semiconductors
Datasheet
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2N6504
2N6504-2N6509
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off state voltage (1)
(Gate open, sine wave 50 to 60 Hz, TJ = 25° to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM, VRRM
50
100
400
600
800
V
On-state current RMS (180° conduction angles; TC = 85°C)
IT(RMS)
25 A
Average on-state current (180° conduction angles; TC = 85°C)
IT(AV)
16 A
Peak non-repetitive surge current (1/2 cycle, sine wave 60 Hz, TJ = 100°C
ITSM 250 A
Forward peak gate power (pulse width ≤ 1.0 µs, TC = 85°C)
PGM 20 W
Forward average gate power (t = 8.3ms, TC = 85°C)
Forward peak gate current (pulse width ≤ 1.0 µs, TC = 85°C)
PG(AV)
IGM
`0.5 W
2.0 A
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions)
and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction-to-case
Maximum lead temperature for soldering purposes 1/8” in from case for 10 seconds
Symbol
RθJC
TL
Max Unit
1.5 °C/W
260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(VAK = rated VDRM or VRRM, gate open)
ON CHARACTERISTICS
Forward on-state voltage (2) (ITM = 50A)
Gate trigger current (continuous dc)
(VAK = 12Vdc, RL = 100Ω)
Gate trigger voltage (continuous dc) (VAK = 12 Vdc, RL = 100Ω, TC = -40°C)
Gate non-trigger voltage (VAK = 12Vdc, RL = 100Ω, TJ = 125°C)
Holding current
(VAK = 12Vdc, initiating current = 200mA, gate open)
Turn-on time (ITM = 25A, IGT = 50mAdc)
TJ = 25°C
TJ = 125°C
TC = 25°C
TC = -40°C
TC = 25°C
TC = -40°C
Symbol Min Typ Max Unit
IDRM, IRRM
-
-
- 10
µA
- 2.0 mA
VTM
- - 1.8
V
IGT
- 9.0 30
- - 75
mA
VGT
- 1.0 1.5
V
VGD 0.2 - -
V
IH
- 18 40
- - 80
mA
tgt
- 1.5 2.0
µs
Rev. 20130116



2N6504
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
ON CHARACTERISTICS
Turn-off time (VDRM = rated voltage)
(ITM = 25A, IR = 25A)
(ITM = 25A, IR = 25A, TJ = 125°C)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off state voltage
(Gate open, rated VDRM, exponential waveform)
2. Pulse test: Pulse width≤ 300µs, duty cycle ≤ 2%.
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
2N6504-2N6509
SILICON CONTROLLED RECTIFIERS
tq
dv/dt
Symbol Min Typ Max Unit
- 15 - µs
- 35 -
- 50 - V/µs
Rev. 20130116







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