2N2222A

2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 60 75 30 40 5 6 600 625 150 - 55 to + 150 Unit V V V mA mW OC OC SEMTECH ELECTRONICS LTD. ® Dated : 12/08/2016 Rev:02 2N2222 / 2N2222A Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA Collector Base Cutoff Current at VCB = 50 V at VCB =...