Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL ...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL
TRANSISTORS
2N2369 2N2369A TO-18
APPLICATIONS
2N2369/A are
NPN Silicon High Speed Saturated Switching,
Transistors With Low Power & High Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage
SYMBOL VCEO VCES
VALUE 15 40
Collector -Base Voltage
VCBO
40
Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse)
VEBO IC IC(peak)
4.5 200 500
Power Dissipation@ Ta=25 degC
PD
360
Derate Above 25 deg C @Tc=25 deg C
@Tc=100 deg C
PD PD
2.06 1.2 0.68
Derate Above100 deg C
6.85
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
2N2369
Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage
VCEO*(sus)IC=10mA, IB=0
VC...
