2N2906

2N2906 2N2906A 2N2907 2N2907A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 2N2906 2N2907 60 2N2906A 2N2907A 60 40 60 5.0 600 400 1.8 -65 to +200 438 97 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2906 2N2907 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V - 20 ICBO VCB=50V, TA=150°C - 20 ICEV VCE=30V, VEB=0.5V - 50 BVCBO IC=10μA 60 - BVCEO IC=10mA 40 - BVEBO IE=10μA 5.0 - VCE(SAT) IC=150mA, IB=15mA - 0...