2N2906 TRANSISTOR Datasheet

2N2906 Datasheet, PDF, Equivalent


Part Number

2N2906

Description

PNP SILICON TRANSISTOR

Manufacture

Central Semiconductor

Total Page 3 Pages
Datasheet
Download 2N2906 Datasheet


2N2906
2N2906 2N2906A
2N2907 2N2907A
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907
series types are silicon PNP epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ΘJA
ΘJC
2N2906
2N2907
60
2N2906A
2N2907A
60
40 60
5.0
600
400
1.8
-65 to +200
438
97
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2906
2N2907
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=50V
- 20
ICBO
VCB=50V, TA=150°C
- 20
ICEV
VCE=30V, VEB=0.5V
- 50
BVCBO
IC=10μA
60 -
BVCEO
IC=10mA
40 -
BVEBO
IE=10μA
5.0 -
VCE(SAT)
IC=150mA, IB=15mA
- 0.4
VCE(SAT)
IC=500mA, IB=50mA
- 1.6
VBE(SAT)
IC=150mA, IB=15mA
- 1.3
VBE(SAT)
IC=500mA, IB=50mA
- 2.6
fT
VCE=20V, IC=50mA, f=100MHz
200 -
Cob VCB=10V, IE=0, f=1.0MHz
- 8.0
Cib VEB=2.0V, IC=0, f=1.0MHz
- 30
ton
VCC=30V, IC=150mA, IB1=15mA
- 45
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA -
100
2N2906A
2N2907A
MIN MAX
- 10
- 10
- 50
60 -
60 -
5.0 -
- 0.4
- 1.6
- 1.3
- 2.6
200 -
- 8.0
- 30
- 45
- 100
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R4 (30-January 2012)

2N2906
2N2906 2N2906A
2N2907 2N2907A
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C)
SYMBOL
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=10V, IC=0.1mA (2N2906, 2N2907)
VCE=10V, IC=0.1mA (2N2906A, 2N2907A)
VCE=10V, IC=1.0mA (2N2906, 2N2907)
VCE=10V, IC=1.0mA (2N2906A, 2N2907A)
VCE=10V, IC=10mA (2N2906, 2N2907)
VCE=10V, IC=10mA (2N2906A, 2N2907A)
VCE=10V, IC=150mA
VCE=10V, IC=500mA (2N2906, 2N2907)
VCE=10V, IC=500mA (2N2906A, 2N2907A)
2N2906
2N2906A
MIN MAX
20 -
40 -
25 -
40 -
35 -
40 -
40 120
20 -
40 -
2N2907
2N2907A
MIN MAX
35 -
75 -
50 -
100 -
75 -
100 -
100 300
30 -
50 -
TO-18 CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R4 (30-January 2012)


Features 2N2906 2N2906A 2N2907 2N2907A PNP SILICO N TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SE MICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar trans istors designed for small signal, gener al purpose switching applications. MARK ING: FULL PART NUMBER TO-18 CASE MAXI MUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitt er-Base Voltage Continuous Collector Cu rrent Power Dissipation Power Dissipati on (TC=25°C) Operating and Storage Jun ction Temperature Thermal Resistance Th ermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 2N2906 2N 2907 60 2N2906A 2N2907A 60 40 60 5.0 600 400 1.8 -65 to +200 438 97 ELECTRICAL CHARACTERISTICS: (TA=25°C u nless otherwise noted) 2N2906 2N2907 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V - 20 ICBO VCB=50V, TA=150° C - 20 ICEV VCE=30V, VEB=0.5V - 50 BVCBO IC=10μA 60 - BVCEO IC=10mA 40 - BVEBO IE=10μA 5.0 - VCE(SAT) IC=150mA, IB=15mA - 0.
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