PNP Transistor. 2N2907A Datasheet

2N2907A Transistor. Datasheet pdf. Equivalent

Part 2N2907A
Description Silicon PNP Transistor
Feature 2N2907A Silicon PNP Transistor Small Signal Switching TO−18 Type Package Absolute Maximum Ratings: .
Manufacture NTE
Datasheet
Download 2N2907A Datasheet



2N2907A
2N2907A
Silicon PNP Transistor
Small Signal Switching
TO18 Type Package
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total
Device Dissipation,
TTAC
=
=
+25C
+25C
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500mW
. . 1.0W
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325C/W
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W
Note 1. Stresses above those listed in Absolute Maximum Ratings may damage the device. If any
of these limits are exceeded, device functionality should not be assumed, damaged may
occur and reliability may be affected.
Electrical Characteristics: (TA = 25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorEmitter Cutoff Current
CollectorBase Cutoff Current
EmitterBase Cutoff Current
ON Characteristics (Note 2)
V(BR)CEO
ICES
ICBO
IEBO
IC = 10mA
VCE = 50V
VCB = 50V, IE = 0
VCB = 60V, IE = 0
VEB = 4V
VEB = 5V
DC Current Gain
hFE VCE = 10V IC = 0.1mA
IC = 1mA
IC = 10mA
IC = 150mA
IC = 500mA
CollectorEmitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
BaseEmitter Saturation Voltage
VBE(sat) IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Min Typ Max Unit
60
V
50 nA
− − 10 nA
− − 10 A
− − 50 nA
− − 10 A
75
100 450
100
100 300
50
− − 0.4
− − 1.6
0.6 1.3
− − 2.6
V
V
V
V



2N2907A
Electrical Characteristics (Cont’d): (TA = 25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
SmallSignal Characteristics
Magnitude of Small Signal Current Gain
SmallSignal Current Gain
Output Capacitance
Input Capacitance
|hfe|
hfe
Cobo
Cibo
IC = 20mA, VCE = 20V, f = 100MHz
IC = 1mA, VCE = 10V, f = 1kHz
VCB = 10V, IE = 0, 100kHz f 1MHz
VEB = 2V, IC = 0, 100kHz f 1MHz
2.0
100
8
30
Switching Characteristics
TurnOn Time
TurnOff Time
ton
toff
− − 45
− − 300
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Unit
pF
pF
ns
ns
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210 (5.33)
Max
.030 (.762) Max
.500
(12.7)
Min
Emitter
45
.018 (0.45)
Base
Collector
.041 (1.05)





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