Planar Transistor. 2N2907 Datasheet

2N2907 Transistor. Datasheet pdf. Equivalent

Part 2N2907
Description PNP Silicon Epitaxial Planar Transistor
Feature 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
Manufacture SEMTECH
Datasheet
Download 2N2907 Datasheet



2N2907
2N2907 / 2N2907A
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group
according to its DC current gain. As
complementary type the NPN transistor ST
2N2222 and ST 2N2222A are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
2N2907
2N2907A
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
Value
60
40
60
5
600
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
SEMTECH ELECTRONICS LTD.
®
Dated: 12/04/2016 Re: 02



2N2907
2N2907 / 2N2907A
Characteristics at Ta = 25
Parameter
DC Current Gain
at -IC = 0.1 mA, -VCE = 10 V
at -IC = 1 mA, -VCE = 10 V
at -IC = 10 mA, -VCE = 10 V
at -IC = 150 mA, -VCE = 10 V
at -IC = 500 mA, -VCE = 10 V
Collector Base Cutoff Current
at -VCB = 50 V
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
2N2907
2N2907A
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Saturation Voltage
at -IC = 150 mA, -IB = 15 mA
at -IC = 500 mA, -IB = 50 mA
Base Saturation Voltage
at -IC = 150 mA, -IB = 15 mA
at -IC = 500 mA, -IB = 50 mA
Gain Bandwidth Product
at -IC = 50 mA , -VCE = 20 V, f = 100 MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Turn-on Time
at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA
Delay Time
at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA
Rise Time
at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA
Turn-off Time
at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA
Storage Time
at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA
Fall Time
at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA
Symbol
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
-ICBO
-ICBO
-V(BR)CBO
-V(BR)CEO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VCE(sat)
-VBE(sat)
-VBE(sat)
fT
Cob
ton
td
tr
toff
ts
tf
Min.
35
75
50
100
75
100
100
30
50
-
-
60
40
60
5
-
-
-
-
200
-
-
-
-
-
-
-
Max.
-
-
-
-
-
-
300
-
-
20
10
-
-
-
-
0.4
1.6
1.3
2.6
-
8
45
10
40
100
80
30
Unit
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
SEMTECH ELECTRONICS LTD.
®
Dated: 12/04/2016 Re: 02





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