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2N2907 Dataheets PDF



Part Number 2N2907
Manufacturers SEMTECH
Logo SEMTECH
Description PNP Silicon Epitaxial Planar Transistor
Datasheet 2N2907 Datasheet2N2907 Datasheet (PDF)

2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Vol.

  2N2907   2N2907



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2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 2N2907 2N2907A Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 60 40 60 5 600 625 150 - 55 to + 150 Unit V V V mA mW ℃ ℃ SEMTECH ELECTRONICS LTD. ® Dated: 12/04/2016 Re: 02 2N2907 / 2N2907A Characteristics at Ta = 25℃ Parameter DC Current Gain at -IC = 0.1 mA, -VCE = 10 V at -IC = 1 mA, -VCE = 10 V at -IC = 10 mA, -VCE = 10 V at -IC = 150 mA, -VCE = 10 V at -IC = 500 mA.


2N2907A 2N2907 2N2907A


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