2N2907 / 2N2907A
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is ...
2N2907 / 2N2907A
PNP Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications.
The
transistor is subdivided into one group according to its DC current gain. As complementary type the
NPN transistor ST 2N2222 and ST 2N2222A are recommended.
On special request, these
transistors can be manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25℃) Parameter
Collector Base Voltage Collector Emitter Voltage
Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
2N2907 2N2907A
Symbol -VCBO
-VCEO
-VEBO -IC Ptot Tj Tstg
Value 60 40 60 5 600 625 150
- 55 to + 150
Unit V
V
V mA mW ℃ ℃
SEMTECH ELECTRONICS LTD.
®
Dated: 12/04/2016 Re: 02
2N2907 / 2N2907A
Characteristics at Ta = 25℃
Parameter
DC Current Gain at -IC = 0.1 mA, -VCE = 10 V
at -IC = 1 mA, -VCE = 10 V
at -IC = 10 mA, -VCE = 10 V
at -IC = 150 mA, -VCE = 10 V at -IC = 500 mA...
