2N2907A

High Speed Switching Transistor Features:   PNP silicon planar switching transistors   Fast switching devices exhibiting short turn-off and low saturation voltage characteristics   Switching and linear application DC and VHF amplifier applications Absolute Maximum Ratings Description Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta = 25ºC Derate above 25ºC Power Dissipation @ Tc = 25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range Symbol Vceo Vcbo Vebo Ic Pd Pd Tj, Tstg Value 60 5 600 400 2.28 1.8 10.3 -55 to +175 Unit V mA mW mW/ ºC W mW/ ºC ºC Pin Configuration 1. Emitter 2. Base 3. Collector Electrical Characteristics (Ta = 25ºC unless specified otherwise) Description Symbol Test Condition Collector Emitter Voltage *Vceo Ic=10mA, Ib=0 Collector Base Voltage Vcbo Ic=10µA, Ie=0 Emitter Base Voltage Vebo Ie=10µA, Ic=0 Collector Cut Off Current ...