2N2906 TRANSISTOR Datasheet

2N2906 Datasheet, PDF, Equivalent


Part Number

2N2906

Description

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

Manufacture

TT

Total Page 3 Pages
Datasheet
Download 2N2906 Datasheet


2N2906
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2906
Low Power
Hermetic TO-18 Metal package.
Ideally suited for High Speed Switching
and General Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-40V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-600mA
PD Total Power Dissipation at TA = 25°C
400mW
Derate Above 25°C
2.3mW/°C
PD Total Power Dissipation at TC = 25°C
1.8W
Derate Above 25°C
10.3mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max. Units
437.5 °C/W
97.2 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8078
Website: http://www.semelab-tt.com
Issue 2
Page 1 of 3

2N2906
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2906
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
V(BR)CBO
V(BR)EBO
ICEX
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
IC = -10mA
IC = -10µA
IE = -10µA
VCE = -30V
IB = 0
IE = 0
IC = 0
VBE = -0.5V
ICBO
Collector Cut-Off Current
VCB = -50V
IE = 0
TA = 150°C
VCE(sat)(1)
Collector-Emitter Saturation
Voltage
IC = -150mA
IC = -500mA
IB = -15mA
IB = -50mA
VBE(sat)(1)
Base-Emitter Saturation
Voltage
IC = -150mA
IC = -500mA
IB = -15mA
IB = -50mA
IC = -0.1mA
VCE = -10V
hFE(1)
Forward-current transfer
ratio
IC = -1.0mA
IC = -10mA
IC = -150mA
VCE = -10V
VCE = -10V
VCE = -10V
IC = -500mA VCE = -10V
DYNAMIC CHARACTERISTICS
fT Transition Frequency
Cobo
Output Capacitance
Cibo
Input Capacitance
ton Turn-On Time
toff Turn-Off Time
Notes
(1) Pulse Width 300us, δ ≤ 2%
IC = -50mA
VCE = -20V
f = 100MHz
VCB = -10V
IE = 0
f = 1.0MHz
VEB = -2V
IC = 0
f = 1.0MHz
IC = -150mA VCC = -30V
IB1 = -15mA
IC = -150mA VCC = -30V
IB1 = - IB2 = -15mA
Min. Typ Max. Units
-40
-60 V
-5
-50
nA
-20
-20 µA
-0.4
-1.6
V
-1.3
-2.6
20
25
35
40 120
20
170 MHz
8
pF
30
45
ns
300
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8078
Website: http://www.semelab-tt.com
Issue 2
Page 2 of 3


Features SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 • Low Power • Hermetic TO-1 8 Metal package. • Ideally suited for High Speed Switching and General Purpo se Applications • Screening Options A vailable ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -40V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation at TA = 25° C 400mW Derate Above 25°C 2.3mW/°C PD Total Power Dissipation at TC = 25 °C 1.8W Derate Above 25°C 10.3mW/ C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Ra nge -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Re sistance, Junction To Ambient RθJC T hermal Resistance, Junction To Case Mi n. Typ. Max. Units 437.5 °C/W 97.2 C/W Semelab Limited reserves the righ t to change test conditions, parameter limits and package dimensions without notice. Information furni.
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