Switching Transistors. 2N2907A Datasheet

2N2907A Transistors. Datasheet pdf. Equivalent

Part 2N2907A
Description PNP Switching Transistors
Feature MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
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2N2907A
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
High current (max.600mA)
Low voltage (max.60V)
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Maximum Ratings
Symbol
Rating
VCEO
Collector-Emitter Voltage
2N2907
2N2907A
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICM Peak Collector Current
IBM Peak Base Current
TJ Operating Junction Temperature
TSTG
Storage Temperature
Thermal Characteristics
Rating
40
60
60
5.0
600
800
200
-55 to +150
-55 to +150
Unit
V
V
V
mA
mA
mA
OC
OC
Symbol
Ptot
Rating
Total power Dissipation
TA25
TC25
Max
400
1.2
Unit
mW
W
RJC Thermal Resistance, Junction to Case
146 K/W
RJA
Thermal Resistance, Junction to Ambient
350
K/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Collector cut-off current
(VCB=50Vdc, IE=0)
ICBO (VCB=50Vdc, IE=0,TA=150)
(VCB=50Vdc, IE=0)
(VCB=50Vdc, IE=0,TA=150)
IEBO
Emitter Cut-off current
(IC=0, VEB=5.0Vdc)
DC Current Gain
(IC=0.1mAdc, VCE=10Vdc)
hFE
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)*
(IC=500mAdc, VCE=10Vdc)*
DC Current Gain
(IC=0.1mAdc, VCE=10Vdc)
hFE
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)*
(IC=500mAdc, VCE=10Vdc)*
2N2907
2N2907A
2N2907
2N2907A
Min
---
---
---
---
---
35
50
75
100
30
75
100
100
100
50
Max Units
20 nAdc
20 uAdc
10 nAdc
10 uAdc
50 nAdc
300
300
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2N2907
2N2907A
PNP Switching
Transistors
TO-18
DIMENSIONS
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A .209 .230 5.309 5.842 Φ
B .178 .195 4.521 4.953 Φ
C .170 .210 4.318 5.334
D .50 .75 12.7 19.05
E .100
2.54
ΦTYP
F .028 .048 7.112 1.219
G ----- .050 ----- 1.27
H .009 .031 0.229 0.787
J 44° 46° 44° 46°
K .036 .046 0.914 1.168
L .016 .021 0.406 0.533
Revision: A
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2011/01/01



2N2907A
2N2907,2N2907A
Symbol
Parameter
ON CHARACTERISTICS*
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage*
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage *
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
SMALL-SIGNAL CHARACTERISTICS
COB
fT
Output Capacitance
(VCB=10Vdc,IE=ie=0, f=1.0MHz)
Transistor Frequency*
(IC=50mAdc, VCE=20Vdc, f=100MHz)
SWITCHING CHARACTERISTICS
Td Delay Time
tr Rise Time
ts Storage Time
ICON=150mAdc,
IBON=15mAdc, IB(off)=15mAdc
tf Fall Time
* Pulse Test: tp300us, Duty Cycle2.0%
MCC
TM
Micro Commercial Components
Min Max Units
--- 400 mVdc
--- 1.6 Vdc
--- 1.3 Vdc
--- 2.6 Vdc
--- 8.0
200 ---
--- 15
--- 35
--- 250
--- 50
pF
MHz
ns
ns
ns
ns
Revision: A
www.mccsemi.com
2 of 3
2011/01/01





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