MMBD6050

MMBD6050 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features Small package Low forward voltage Fast reverse recovery time Small total capacitance Applications Ultra high speed switching application 3 12 Marking Code: 5D SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Peak Forward Surge Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VR IF IFSM Pd Tj Ts Value 70 200 500 300 150 - 55 to + 150 Unit V mA mA mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 100 mA Reverse Current at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA Symbol VF IR V(BR)R CT trr Min. 0.55 0.85 70 - Max. 0.7 1.1 100 2.5 4 Unit V nA V pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exch...