MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Gate Current
Symbol vDs Vgs
'G
THERMAL CHARACTERISTICS...
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Gate Current
Symbol vDs Vgs
'G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
Storage Temperature
T StQ
Thermal Resistance Junction to Ambient
R&JA
Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 25 25 10
Max
350
2.8 150 357
Unit Vdc Vdc
mAdc
Unit
mW
mW/°C
°C °C/W
MMBFU310
CASE 318-02/03, STYLE 10
SOT-23 (TO-236AA/AB)
FET
TRANSISTOR
N-CHANNEL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
G(l = -1.0 yuA, V DS = 0)
Gate 1 Leakage Current (vqs = -15 V, v Ds = o)
Gate 2 Leakage Current
(VGS = -15V,V DS = 0, TA = 125°C)
Gate Source Cutoff Voltage (Vqs = 10 V, Id = 10 nA)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(V DS = 10V,VGS = 0)
Gate-Source Forward Voltage
G(l = 10 mA, V D S = 0) SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance (V D s = ...
