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MMBR901

Lunsure Electronic

NPN Silicon High-Frequency Transistor

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBR901 Description • High C...


Lunsure Electronic

MMBR901

File Download Download MMBR901 Datasheet


Description
Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBR901 Description High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ) High Power Gain – Gpe(matched)=12.0dB (Typ) @ f=1.0GHz Operating & Storage Temperature: -55°C to +150°C Marking Code: 7A MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VCEO 15 Vdc VCBO 25 Vdc VEBO 2.0 Vdc Collector Current - Continuous IC 30 mAdc Thermal Resistance, Junction to Case RqJC 250 oC/W Power Dissipation @ TC=75oC (1) Derate above 75oC PD(max) 0.300 4.0 Watt mW/oC Electrical Characteristics @ 25oC Unless Otherwise Noted Characteristics OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0mAdc, IB = 0) Collector-Base Breakdow n Voltage (IC = 0.1mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1mAdc, IC = 0) Collector Cutoff Current ...




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