MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation, Ta = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
Thermal Resistance Junction to Ambient
R 0JA
Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 30 14 4.0 50
Max
350 2.8 150 357
Unit Vdc Vdc Vdc
mAdc
Unit
mW
mW/°C
°C °C/W
MMBR2060
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF AMPLIFIER
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, Ib = 0)
Collector Cutoff Current
(VC B = 10 Vdc, Ig = 0)
Emitter Cutoff Current
(VEB = 4.0, Ic = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 5.0 mAdc, Vce = 5.0 Vdc) (IC = 20 mAdc, Vce = 10 Vdc, f = 500 MHz)
Collector-Emitter Saturation Voltage dC = 80 mAdc, Ig = 8.0 mAdc)...
