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MMBR911LT1G

Advanced Power Technology

NPN SILICON HIGH-FREQUENCY TRANSISTOR

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 NPN SILICON LOW NOISE, HIGH-...


Advanced Power Technology

MMBR911LT1G

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR DESCRIPTION: Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This small–signal plastic transistor offers superior quality and performance at low cost. MMBR911LT1 MMBR911LT1G * G Denotes RoHS Compliant, Pb Free Terminal Finish FEATURES: High Gain–Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD(max) TSTG TJmax Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base V...




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