2N6190 SILICON TRANSISTORS Datasheet

2N6190 Datasheet, PDF, Equivalent


Part Number

2N6190

Description

PNP SILICON TRANSISTORS

Manufacture

Seme LAB

Total Page 2 Pages
Datasheet
Download 2N6190 Datasheet


2N6190
2N6190
MECHANICAL DATA
Dimensions in mm(Inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
PNP SILICON
TRANSISTORS
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• HERMETICALLY SEALED TO-39
PACKAGE
• CECC LEVEL SCREENING OPTIONS
• JAN LEVEL SCREENING OPTIONS
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
13
45°
2.54
(0.100)
APPLICATIONS:
Hermetically sealed, the 2N6190 silicon
planar epitaxial PNP transistor is intended for
general purpose applications.
TO39 PACKAGE(TO205AD)
Pin 1 = Emitter
Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated
VCBO
Collector – Base Voltage(IE = 0)
80V
VCEO
Collector – Emitter Voltage (IB = 0)
80V
VEBO
Emitter – Base Voltage (IC = 0)
6V
IC Collector Current
5A
IB Base Current
1A
Ptot Total Dissipation at TC 25°C
10W
derate above 25°C
17.5°C/W
Tstg Storage Temperature Range
Tj Junction temperature
–55 to +200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5912
Issue: 1

2N6190
2N6190
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
V(BR)CEO*
ICBO
ICEX
ICEO
IEBO
VCE(sat)*
VBE(sat)*
hFE*
fT
CIBO
COBO
td
tr
ts
tf
Parameter
Collector Emitter Breakdown Voltage
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Collector-Emitter Cut Off Current
Collector-Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transition Frequency
Input Capacitance, Output Open
Circuited
Open Circuit Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
IC = 50mA
IE = 0
VBE = 1.5V
IB = 0
VBE = 6V
IC = 2A
IC = 5A
IC = 2A
IC = 5A
IC = 0.5A
IC = 2A
IC = 5A
VCE = 10V
f = 10MHz
VCB = 80V
VCE = 75V
TA = 150°C
VCE = 75V
IB = 0.2A
IB = 0.5A
IB = 0.2A
IB = 0.5A
VCE = 2V
VCE = 2V
VCE = 2V
IC = 0.5A
VBE = 2V
f =100kHz
IC = 0
VCB = 10V IE = 0
f =100kHz
VCC = 40V IE = 2.0A
VBE(off) = 3.0 IB1 = 0.2A
VCC = 40V IE = 2.0A
IB1 = IB2 = 0.2A
* Pulse Test: tp = 300µs , δ = 1%.
Min.
80
30
30
20
30
Typ.
Max.
10
10
1.0
100
100
0.7
1.2
1.2
1.8
Unit
V
µA
µA
mA
µA
µA
V
V
120
MHz
1250
300
100
100
20
200
pF
ns
µs
ns
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5912
Issue: 1


Features 2N6190 MECHANICAL DATA Dimensions in mm (Inches) 8.51 (0.34) 9.40 (0.37) 7.75 ( 0.305) 8.51 (0.335) 6.10 (0.240) 6.60 ( 0.260) 12.70 (0.500) min. (00.0.8395) max. 0.41 (0.016) 0.53 (0.021) dia. 5. 08 (0.200) typ. PNP SILICON TRANSISTOR S FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • HERMETICALLY SEALED TO-39 PACKAGE • CECC LEVEL SCREENING OPTIONS • JAN LEVEL SCREENING OPTION S 0.74 (0.029) 1.14 (0.045) 0.71 (0.02 8) 0.86 (0.034) 2 13 45° 2.54 (0.10 0) APPLICATIONS: Hermetically sealed, the 2N6190 silicon planar epitaxial PNP transistor is intended for general pur pose applications. TO39 PACKAGE(TO205A D) Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO Collector – Base Voltage(IE = 0 ) 80V VCEO Collector – Emitter Vol tage (IB = 0) 80V VEBO Emitter – B ase Voltage (IC = 0) 6V IC Collector Current 5A IB Base Current 1A Ptot Total Dissipation at TC ≤ 25°C 10W derate above 25°C 17..
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